SEMIX151GB12VS ? by semikron rev. 2 ? 16.02.2011 1 semix ? 1s gb SEMIX151GB12VS features ? homogeneous si ?v ce(sat) with positive temperature coefficient ? high short circuit capability ? ul recognised file no. e63532 typical applications* ?ac inverter drives ?ups ? electronic welding remarks ? case temperature limited to t c =125c max. ? product reliability results are valid for t j =150c absolute maximum ratings symbol conditions values unit igbt v ces t j =25c 1200 v i c t j = 175 c t c =25c 231 a t c =80c 176 a i cnom 150 a i crm i crm = 3xi cnom 450 a v ges -20 ... 20 v t psc v cc = 720 v v ge 15 v v ces 1200 v t j =125c 10 s t j -40 ... 175 c inverse diode i f t j = 175 c t c =25c 189 a t c =80c 141 a i fnom 150 a i frm i frm = 3xi fnom 450 a i fsm t p = 10 ms, sin 180, t j =25c 900 a t j -40 ... 175 c module i t(rms) t terminal =80c 600 a t stg -40 ... 125 c v isol ac sinus 50hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbt v ce(sat) i c =150a v ge =15v chiplevel t j =25c 1.75 2.20 v t j =150c 2.20 2.5 v v ce0 t j =25c 0.94 1.04 v t j =150c 0.88 0.98 v r ce v ge =15v t j =25c 5.4 7.7 m ? t j =150c 8.8 10.1 m ? v ge(th) v ge =v ce , i c = 6 ma 5.5 6 6.5 v i ces v ge =0v v ce = 1200 v t j =25c 0.1 0.3 ma t j =150c ma c ies v ce =25v v ge =0v f=1mhz 9.0 nf c oes f=1mhz 0.89 nf c res f=1mhz 0.88 nf q g v ge = - 8 v...+ 15 v 1650 nc r gint t j =25c 5.00 ? t d(on) v cc = 600 v i c =150a v ge =15v r g on =1 ? r g off =1 ? di/dt on = 4600 a/s di/dt off =1700a/s du/dt off = 6700 v/ s t j =150c 319 ns t r t j =150c 46 ns e on t j =150c 19.4 mj t d(off) t j =150c 482 ns t f t j =150c 68 ns e off t j =150c 17.1 mj r th(j-c) per igbt 0.19 k/w
SEMIX151GB12VS 2 rev. 2 ? 16.02.2011 ? by semikron characteristics symbol conditions min. typ. max. unit inverse diode v f = v ec i f = 150 a v ge =0v chip t j =25c 2.14 2.46 v t j =150c 2.07 2.38 v v f0 t j =25c 1.1 1.3 1.5 v t j =150c 0.7 0.9 1.1 v r f t j =25c 4.3 5.6 6.4 m ? t j =150c 7.0 7.8 8.5 m ? i rrm i f = 150 a di/dt off =4400a/s v ge =-15v v cc = 600 v t j =150c 175 a q rr t j =150c 27.5 c e rr t j =150c 11.5 mj r th(j-c) per diode 0.31 k/w module l ce 16 nh r cc'+ee' res., terminal-chip t c =25c 0.7 m ? t c =125c 1m ? r th(c-s) per module 0.075 k/w m s to heat sink (m5) 3 5 nm m t to terminals (m6) 2.5 5 nm nm w 145 g temperatur sensor r 100 t c =100c (r 25 =5 k ? ) 493 5% ? b 100/125 r (t) =r 100 exp[b 100/125 (1/t-1/t 100 )]; t[k]; 3550 2% k semix ? 1s gb SEMIX151GB12VS features ? homogeneous si ?v ce(sat) with positive temperature coefficient ? high short circuit capability ? ul recognised file no. e63532 typical applications* ?ac inverter drives ?ups ? electronic welding remarks ? case temperature limited to t c =125c max. ? product reliability results are valid for t j =150c
SEMIX151GB12VS ? by semikron rev. 2 ? 16.02.2011 3 fig. 1: typ. output characteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
SEMIX151GB12VS 4 rev. 2 ? 16.02.2011 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching ti mes vs. gate resistor r g fig. 9: typ. transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ee' fig. 11: typ. cal diode peak reverse recovery current fig. 12: typ. cal diode recovery charge
SEMIX151GB12VS ? by semikron rev. 2 ? 16.02.2011 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may no t be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. the use of semikron produc ts in life support appliances and syste ms is subject to prior specification and written approval by semikron. we therefore strongly recommend prior consultation of our staf f. semix 1s spring configuration
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